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PD - 91368B
IRFL4310
HEXFET(R) Power MOSFET
D
l l l l l l
Surface Mount Dynamic dv/dt Rating Fast Switching Ease of Paralleling Advanced Process Technology Ultra Low On-Resistance
VDSS = 100V RDS(on) = 0.20W
G S
ID = 1.6A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
SOT-223
Absolute Maximum Ratings
Parameter
ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 25C VGS EAS IAR EAR dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V** Continuous Drain Current, VGS @ 10V* Continuous Drain Current, VGS @ 10V* Pulsed Drain Current Power Dissipation (PCB Mount)** Power Dissipation (PCB Mount)* Linear Derating Factor (PCB Mount)* Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy* Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
2.2 1.6 1.3 13 2.1 1.0 8.3 20 47 1.6 0.10 5.0 -55 to + 150
Units
A W W
mW/C
V mJ A mJ V/ns C
Thermal Resistance
Parameter
RqJA RqJA Junction-to-Amb. (PCB Mount, steady state)* Junction-to-Amb. (PCB Mount, steady state)**
Typ.
93 48
Max.
120 60
Units
C/W
* When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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5/11/99
IRFL4310
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
DV(BR)DSS/DTJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. Typ. Max. Units Conditions 100 V V GS = 0V, ID = 250A 0.12 V/C Reference to 25C, I D = 1mA 0.20 W V GS = 10V, ID = 1.6A 2.0 1.5 4.0 25 250 100 -100 17 25 2.1 3.1 7.8 12 7.8 18 34 20 330 92 54 V S A nA nC V DS = VGS, ID = 250A VDS = 50V, ID = 0.80 A V DS = 100V, V GS = 0V V DS = 80V, VGS = 0V, TJ = 125C V GS = 20V V GS = -20V I D = 1.6A VDS = 80V VGS = 10V, See Fig. 6 and 13 VDD = 50V I D = 1.6A RG = 6.2 W RD = 31 W, See Fig. 10 V GS = 0V VDS = 25V = 1.0MHz, See Fig. 5
ns
pF
Source-Drain Ratings and Characteristics
IS
I SM
VSD t rr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units 72 210 0.91 A 13 1.3 110 320 V ns nC
Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 1.6A, VGS = 0V TJ = 25C, I F = 1.6A di/dt = 100A/s
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) RG = 25W, IAS = 3.2A. (See Figure 12)
ISD 1.6A, di/dt 340A/s, VDD V(BR)DSS,
TJ 150C
VDD = 25V, starting TJ = 25C, L = 9.2 mH
Pulse width 300s; duty cycle 2%.
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IRFL4310
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IRFL4310
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IRFL4310
Package Outline
SOT-223 (TO-261AA) Outline
Part Marking Information
SOT-223
EXAMPLE : THIS IS AN IRFL014 WAFER LOT CODE XXXXXX DATE CODE (YWW) Y = LAST DIGIT OF THE YEAR WW = WEEK
PART NUMBER INTERNATIONAL RECTIFIER LOGO FL014 314
TOP
BOTTOM
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IRFL4310
Tape & Reel Information
SOT-223 Outline
4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 0.35 (.013) 0.25 (.010)
TR
2.05 (.080) 1.95 (.077)
7.55 (.297) 7.45 (.294)
7.60 (.299) 7.40 (.292) 1.60 (.062) 1.50 (.059) TYP. FEED DIRECTION 12.10 (.475) 11.90 (.469) 7.10 (.279) 6.90 (.272)
16.30 (.641) 15.70 (.619)
2.30 (.090) 2.10 (.083)
NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
13.20 (.519) 12.80 (.504) 15.40 (.607) 11.90 (.469) 4
330.00 (13.000) MAX.
50.00 (1.969) MIN.
NOTES : 1. OUTLINE COMFORMS TO EIA-418-1. 2. CONTROLLING DIMENSION: MILLIMETER.. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
18.40 (.724) MAX. 14.40 (.566) 12.40 (.488)
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WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 5/99
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